| PART |
Description |
Maker |
| D1007UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| STK433-040-E |
2-channel class AB audio power IC, 40W 40W
|
Sanyo Semicon Device
|
| UF2840G |
RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28150J |
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| CHF2525CNT500LW CHF2525CNT500LX |
RESISTOR, 50 OHM 40W DC-9GHZ; Series:CHF2525; Resistance:50R; Tolerance, resistance: /-5%; Power rating:40W; Resistor element type:Thick Film; Case style:2525; Length / Height, external:6.35mm; Tolerance, :5%; Tolerance, -:5%; RoHS Compliant: Yes
9 GHz 40 W Termination Chip
|
BOURNS INC
Bourns Electronic Solutions
|
| 2SB633 2SB633E 2SB633C |
TRANSISTOR | BJT | PNP | 85V V(BR)CEO | 6A I(C) | TO-220AB
POWER TRANSISTORS(6.0A/85V/40W)
POWER TRANSISTORS(6.0A,85V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| LT1222 LT1222C LT1222CN8 LT1222CS8 LT1222M LT1222M |
From old datasheet system
500MHz, 3nV/Hz, A 10 Operational Amplifier
500MHz Operational Amplifier
|
LINER[Linear Technology]
|
| EL5130IS-T7 EL5130ISZ EL5131 EL5131IW-T7 EL5131IWZ |
500MHz Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
500MHz Low Noise Amplifiers 500MHz的低噪声放大
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| M67781L 67781L M67781 |
135-160MHz, 12.5V, 40W, FM MOBILE RADIO
From old datasheet system
135-160MHz / 12.5V / 40W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
